pjb649a pnp epitaxial silicon transistor 1-3 2002/01.rev.a ? complementary pair with pjd669a ? *value at tc = 25 pjb649a characteristic symbol tes condition min typ max unit collector to base breakdown voltage v (br)cbo i c = -1ma, i e = 0 -180 -- -- v collector to emitter brea kdown voltage v (br)ceo i c = -10ma, r be = -160 -- -- v emitter to base brea kdown voltage v (br)ebo i e = -1ma, i c = 0 -5 -- -- v collector cutoff current i cbo v cb = -160v,i e =0 -- -- -10 - a h fe 1 * v ce = -5v,i c = -150ma 60 -- 200 dc current transfer ratio h fe 2 v ce = -5v,i c = -500ma** 30 -- -- collector to emitter saturation voltage v ce (sat) i c = -500ma,i b = -50ma -- -- -1 v base to emitter voltage v be v ce = -5v, i b = -150ma -- -- -1.5 v gain bandwidth product f t v ce = -5v, i c = -150ma -- 140 -- mhz collector output capacitance c ob v cb = -10v, i e = 0, f = 1mhz -- 27 -- pf *the pjb649a are grouped by h fe 1 as follows. **pulse test maximum collector dissipation curve classification b c d hfe(1) 60 to 120 100 to 200 -- characteristic symbol rating unit collector to base volta g e v cbo -180 v collector to emitter voltage v ceo -160 v emitter to base voltage v ebo -5 v collector current ic -1.5 a collector peak current ic (peak) -3 a collector power dissipation pc 1 w pc* 20 w junction temperature tj 150 storage temperature tstg -55 to +150 device operating temperature package PJB649ACK -20 +85 to-126 absolute maximum ratings (ta = 25 ) electrical characteristics (ta = 25 c ) to-126 pin : 1. emitter 2. collector 3. base ordering information
pjb649a pnp epitaxial silicon transistor 2-3 2002/01.rev.a area of safe operation typical transfer characteristics collector to emitter sat uration voltage vs. collector current typical output characteristics dc current transfer ratio dc current transfer ratio vs. collector current base to emitter sat uration voltage vs. collector current gain bandwidth product vs. collector current collector output capacit ance vs. collector to base voltage
pjb649a pnp epitaxial silicon transistor 3-3 2002/01.rev.a
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